要做一篇中国股市走势及如何选股的论文，求高手的明确理论、精辟分析、实证结果，悬赏有限感激不尽！

1. 要做一篇中国股市走势及如何选股的论文，求高手的明确理论、精辟分析、实证结果，悬赏有限感激不尽！

既然是论文，就不要写成股评。如果还是新手，建议不要写这些东西。

2. 谁知道大盘2009年到2011年各个季度的涨幅，写论文要用，但是一时找不到，急求！！记住是每个季度哦~~~

证券统计排行网”有大量关于此类的问题解答，您可以去查看！

3. 近万亿美元扑向A股 看多股市还需要多少理由

真正需要的是政策
不能再把股市当成提款机
吃相那么难看

4. 怎样认识，判断和抓住股市机会避免赔钱的重灾户

玩好股票，最重要的我认为有2点。第一，把握大资金流向，了解主力动向；第二，及时掌握时政消息。毕竟在中国，消息面往往比什么技术面、经验流管用得多。所以呢，经验就是多看少动。如果你是新手，多进行模拟操作（比如游侠股市模拟炒股），也就是通过一些模拟炒股软件或者什么的先练习。每天都要看盘以及新闻。至于大资金流向等主力行为，如果是老手了，可以付费使用大智慧，同花顺等炒股软件，里面有资金流向等各种指标，不过费用很高，大概几万、十几万甚至几十万一年。如果就是个小散户，那就没有必要了。最后说一句，炒股可以当成爱好，但是一定不要把它当成赚钱工具或者工作，除非钱太多没处花。

5. 求高手翻译一篇论文摘要，感激不尽！！！ 摘 要 本文对应变硅MOS界面特性进行了系统，深入的研究。 针对应

　　我是学IC的，有些专业名词可能译的不对。
　　In this paper, the interface characteristics of strained silicon MOS are studied.
　　Based on the device structure of strained silicon MOS surface channel, a model of gate voltage and inverse layer minority carrier concentration is established. Through the analysis of this model, the capacitance-voltage characteristic of strained silicon MOS is studied. The results show that the energy band difference between the strain Si and relaxed SiGe heterojunction would limit the formation of electrons and holes. At room temperature, the C-V curve of strained silicon MOS has a step phenomenon in the depletion region or in the inversion region. The step changes with respect to the epitaxial layer doping concentration of the strain Si / relaxed SiGe.
　　From the high-frequency C-V experiment results, the interface charge of the strain Si/SiO2 system and its influence on the interface characteristic are discussed. Finally, by improving and correcting the method of bulk silicon MOS high-frequency capacitance measurement, the interface state density of strain Si/SiO2 is measured and calculated.
　　According to the device physics, a semi-empirical model of strained silicon n-MOSFET inversion channel electron mobility is proposed. The model takes the influence of the scattering factors (such as lattice, ionized impurity, surface phonon, interface charge and interface roughness ) on the channel mobility into account, and also includes the shielding effect of 反型electronic as well. Finally, the Matlab simulation is carried out, and simulation results are in complete accord with the experiment.

6. 求一篇论文，我心中的思政课，原创，感激不尽！

说详细点才可能.